Abstract
Semiconductor blue laser diode was used for crystallization annealing of amorphous silicon of backplane of flat panel display. The grain size of result crystal can be controlled by laser beam intensity or beam scanning speed. The poly silicon produced by BLDA showed same characteristics as ELA in LTPS. Lateral crystal have been produced by BLDA, its field mobility is three times higher than poly silicon by ELA. A multiple head equipment is proposed, by which high performance TFT can be made with significantly lower cost comparing to conventional laser anneal technology.
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