3.3 V operation GaAs power MESFETs with 65% power-added efficiency for hand-held telephones

Abstract

High-low doped metal semiconductor field effect transistors (MESFETs) operating at a drain bias of 3.3 V have been developed. The MESFETs with 0.6 µm gate length and 12 mm gate width show a maximum drain current density of 310 mA/mm and a uniform transconductance of around 112 mS, ranging from Vgs = –1.8 V to 0.5 V. The device tested at 3.3 V drain bias and 900 MHz demonstrates an output power of 30.9 dBm with associate power-added-efficiency of 65% for an input power of 20 dBm.