Abstract
The adjustment of emitter efficiency by variation of doping profiles or application of lifetime control techniques such as irradiation of electrons and helium are two generally recognized concepts for the improvement of power device characteristics. In this work both concepts were studied by use of device simulation for the development of an IGBT and freewheeling diode chipset for 3.3 kV. Simulations were performed using an extended recombination model and recombination center data taken from measurements at different irradiated devices. Finally, this lead to the manufacturing of an IGBT using low-emitter efficiency and an irradiated freewheeling diode. The experimental results are in good accordance with the previously performed simulations and give evidence of the capabilities of present device simulation tools.
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