320 × 256 avalanche array photodetector on the basis of ternary alloys of the A3B5 group with an InGaAs absorbing layer and an InAlAs barrier layer

Abstract

320 × 256 avalanche array photodetector on the basis ternary alloys of the A3B5 group with an InGaAs absorbing (in the band of 0.9–1.7 μm) layer and InAlAs barrier layer is studied. The array of 320 × 256 elements was fabricated in a nBp nanoheterostructure by the mesa technology. The number of imperfect elements, the dependence of the dark current on the bias voltage, and the avalanche gain factor are measured.