Abstract
InGaAs quantum wire structures with composition-controlled InAlAs barrier layer have been fabricated on non-planar substrates by molecular beam epitaxy. The InAlAs barrier layer lattice-matched to InP on top of the truncated ridges is obtained by the control of the In flux during the growth, otherwise, the composition of InAlAs barrier layer deviates. The PL intensity of InGaAs quantum wires with composition-controlled InAlAs barrier layer is stronger than that of the wires without compositional control. This result indicates that the InGaAs quantum wire structures with good quality are fabricated by the compositional control of the InAlAs barrier layer.
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