Abstract
In this work, a novel thin film transistor (TFT) structure named ASD was prepared, which means active layer bottom‐contact with source/drain(SD) layer. ASD device use the first light shield metal layer served as SD electrode simultaneously, which can reduce 2‐count‐mask array process compared with traditional top gate (TG) device. The mobility and subthreshold swing of the ASD a‐IGZO TFT device can reach 14 cm2/Vs and 0.18 V/dec, respectively. The PBTS and NBTIS are within 0.5V through process optimization. In addition, a 7.1 inch Micro‐LED display used ASD TFT backplane has demonstrated, and Finally, the Micro‐LED panel shows +0.7V Vth shift after the high temperature and high humidity operation (HTHHO) 500h reliability test.
Published Version
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