Abstract
A simple optical model based on the transfer matrix method was used to simulate photon absorption in oxide semiconductor systems with varying insulator thickness in the thin film transistor (TFT) structure. For comparison with actual experimental results, hole current was measured in transparent metal/semiconductor/insulator/metal capacitor stacks under light illumination, and the threshold voltage shift under negative bias illumination stress conditions was also measured in the TFT structure. In each structure, experimental data showed variance as the insulator thickness changed, and these results agreed well with the simulations. The results showed that light interference in multi-layered devices has a crucial influence on the reliability of them under illumination and that they should be considered when designing systems that work under these conditions. The accuracy of the simulations suggests they can be implemented to minimize instability issues in oxide TFTs for display.
Published Version
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