Abstract
It has been shown that p- and n-type doped diamond films and combinations can be applied for a variety of electronic and optoelectronic applications. To achieve success, a comprehensive knowledge of doping technology and related analysis techniques are required. For p-type doping, the impurity boron is easily incorporated into both natural and synthesized diamond, whereas n-type diamond, which is not present in nature, has been recently developed by phosphorus doping. Progress in p- and n-type doping of diamond semiconductors has stimulated extensive research on the various types of p–n junction devices, bringing diamond closer to practical applications for future electronics.
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