Abstract
To achieve a highly reliable IGZO transistor, silicon nitride thin film, as a passivation layer, has been extensively investigated in recent years, mainly due to readily available fabrication, along with good barrier performance. Here, we found out that larger amount hydrogen residuals was observed in the PECVD deposited SiNx passivation layer, more stable the IGZO oxide device exhibited, which is abnormal behavior to that commonly known in the literatures. Given that FT‐IR and SIMS analysis with various controlled SiNx thin film upon different deposition conditions, the plasma parameters such as power, pressure, source gas ratio could affect hydrogen ion diffusivity into the IGZO layer during the deposition and the chemical composition of hydrogen residuals in the resulting SiNx layer, which is more dominant, rather than absolute hydrogen contents itself, to the initial electrical properties as well the stability of the IGZO transistor device.
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