3-D TCAD Assessment of Fin-Based Hybrid Devices Under Heavy Ion Irradiation in 20-nm Technology

Abstract

In this paper, the single event transient responses in nanometer hybrid FinFETs like wavy and symmetric dual- ${k}$ spacer (SDS) wavy FinFETs are systematically investigated. The novel SDS wavy FinFETs consist of an ultra-thin body, FinFET, and spacer engineering on a single silicon-on-insulator platform. Three-dimensional quantum simulations are used to study the heavy ion impact on 20 nm n-type hybrid devices. The physical insights on the post ion irradiation of the devices are carefully observed and compared with the conventional FinFETs. The effects of heavy ion irradiation on various parameters including current density, ion generation, transient current, and bipolar amplification are estimated. Furthermore, the post-ion irradiation is also examined as a function of ion characteristic time and ion-track radius.