3× 10<sup>18</sup> - 1 × 10<sup>19 </sup>cm <sup>-3</sup> Al<sup>+</sup> Ion Implanted 4H-SiC: Annealing Time Effect

Abstract

This work takes into account low Al implanted concentrations of 3 x 1018 cm-3 and 1 x 1019 cm-3 to compare the results of 1600°C and 1950°C post-implantation annealing treatments, done with two different annealing times per given implanted Al concentration and post implantation annealing temperature. Current-voltage and Hall effect measurements were performed to have the drift hole density and the drift hole mobility curves in the temperature range 100 - 650 K. The fitting of these curves in the frame of a carrier transport into the extended states of the valence band were performed to estimate the Al acceptor density, the donor compensator density, and the Al acceptor ionization energy. Peculiar feature of hole density and hole mobility curves is a contemporaneous increase of both carrier density and mobility values with increasing annealing time, which is congruent with the output parameters of the fitting procedure. The latter shows an almost stable Al electrical activation and a decrease of compensation with increasing annealing time for constant annealing temperature and given implanted Al concentration.