2D simulations of interdigitated back contact heterojunction solar cells based on n‐type crystalline silicon

Abstract

AbstractThe combination of amorphous silicon/crystalline silicon heterojunction (a‐Si:H/c‐Si) concept with interdigitated back contact leads to a very promising structure for high efficiency solar cell. In this work, we study the interdigitated back contact silicon heterojunction (IBC‐SiHJ) structure by two‐dimensional numerical simulations and we focus on IBC‐SiHJ solar cells based on n‐type c‐Si. Assuming low surface recombination velocity (10 cm/s), we study the effect of the following parameters: bulk lifetime and doping concentration of c‐Si, density of defects at the a‐Si:H/c‐Si interface. The influence of these parameters has been tested by generating the current‐voltage (I‐V) curves. Results indicate that with a high crystalline substrate quality and low recombining a‐Si:H/c‐Si interfaces efficiencies approaching 25% can be reached. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)