Abstract
We present a 2D model for the unsteady carbon transport and incorporation into the crystal during the vapor pressure-controlled Czochralski growth of semi-insulating GaAs. The model is based on a conjugated analysis of global heat transfer, turbulent melt convection, and the flow in the encapsulant within a quasi steady-state approximation. Carbon transport in the melt is coupled to the transport of carbon monoxide in B 2O 3 encapsulant, assuming CO dissolution at the melt/encapsulant interface. CO concentration in the gas near the encapsulant surface, estimated from experimental observations, is used to formulate an external boundary condition. The model is validated using measurements of carbon concentration in grown 3-in GaAs crystals. The results obtained help to reveal basic mechanisms controlling carbon incorporation into the crystal.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
