Abstract

Low-field magnetotransport measurements of topological insulators such as Bi2Se3 are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities (∼1019 cm−3) were reported, which can be related to additional two-dimensional layered conductivity, hampering the identification of the topological surface states. Here, we report that quantum corrections to the electronic conduction are dominated by the surface states for a semiconducting case, which can be analyzed by the Hikami-Larkin-Nagaoka model for two coupled surfaces in the case of strong spin-orbit interaction. However, in the metallic-like case this analysis fails and additional two-dimensional contributions need to be accounted for. Shubnikov-de Haas oscillations and quantized Hall resistance prove as strong indications for the two-dimensional layered metallic behavior. Temperature-dependent magnetotransport properties of high-quality Bi2Se3 single crystalline exfoliated macro and micro flakes are combined with high resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy, confirming the structure and stoichiometry. Angle-resolved photoemission spectroscopy proves a single-Dirac-cone surface state and a well-defined bulk band gap in topological insulating state. Spatially resolved core-level photoelectron microscopy demonstrates the surface stability.

Highlights

  • Dominated by the topological surface states (TSS) carriers in the semiconducting regime, but in the metallic-like regime additional 2D layers contribute

  • TSS as detected from ARPES measurements on Bi2Se3 single crystals are confirmed by transport measurements on semiconducting micro flakes

  • TEM and photoelectron emission microscopy (PEEM) analysis ensures that micro flakes have the same structural and chemical composition as in the bulk

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Summary

Introduction

Dominated by the TSS carriers in the semiconducting regime, but in the metallic-like regime additional 2D layers contribute. In low-magnetic fields a weak-antilocalization (WAL) cusp in the conductivity exists in both cases, and we discuss the analysis employing the Hikami-Larkin-Nagaoka (HLN) model[24]. As support for the 2D layered transport in the metallic-like case, we find SdH oscillations in the longitudinal bulk conductivity and quantization of the transversal (Hall) resistivity in high-magnetic fields

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