Abstract
There has been an enormous focus on low-dimensional layered transition metal dichalcogenides (TMDs) for new futuristic electronic device fabrication. In this paper, we report the density functional theory based calculations of electronic properties of two dimensional (2D) and one dimensional (1D) heterostructures of ZT-MoSe2/PdSe2. The Schottky barrier with p-type contact changes to n-type contact by applying an external electric field and finally into ohmic on further increase in the electric field. The dangling bonds present on the edges of the 1D heterostructure are important to decide its electronic structure which changes from metallic to semiconductor on edge passivation.
Published Version
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