Abstract
We report 2.8 μm emission from compressively strained type-I quantum wells (QWs) grown on InP-based metamorphic InAsxP1−x step-graded buffers. High quality metamorphic graded buffers showed smooth surface morphology and low threading dislocation densities of approximately 2.5 × 106 cm−2. High-resolution x-ray diffraction scans showed strong satellites from multiple quantum wells grown on metamorphic buffers, and cross-sectional transmission electron microscopy revealed smooth and coherent quantum well interfaces. Room-temperature photoluminescence emission at 2.8 μm with a narrow linewidth (∼50 meV) shows the promise of metamorphic growth for mid-infrared laser diodes on InP.
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