Abstract
GaPAsSb type-I quantum wells and symmetric InGaAs/GaPAsSb/InGaAs type-II quantum wells are proposed as long wavelength active layers for GaAs based optoelectronic devices. Room temperature photoluminescence from 1.2 to 1.5 μm is observed from the type-II quantum wells, while low temperature photoluminescence at 1.25 μm is observed from type-I quantum wells. A reflection high-energy electron diffraction peak that is extended parallel to the surface, while its width is perpendicular to the surface is narrow, suggests that spontaneous lateral composition modulation occurs in the GaPAsSb layers.
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