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https://doi.org/10.1889/1.1830929
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Cite Publication Date: May 1, 2002 |
Affiliation: Seoul National University
AbstractHigh‐mobility poly‐Si TFTs have been fabricated by a simple ELA method which employs a selectively floating a Si active layer. Large lateral grains exceeding 4μm have been grown. The proposed poly‐Si TFT exhibits a high field—effect mobility of 459cm2/Vsec due to the reduction of grain boundaries perpendicular to current path.
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