Abstract
AbstractPolycrystalline silicon (poly‐Si) thin film transistors (TFT's) employing vertical amorphous silicon (a‐Si) offsets have been fabricated without additional photolithography processes. The a‐Si offset has been formed utilizing the poly‐Si grain growth blocking effect by thin native oxide film during the excimer laser recrystallization of a‐Si. The ON current degradation of the new device after 4 hour's electrical stress, was reduced by at least 5 times compared with conventional poly‐Si TFT's.
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