Abstract
Microdefects, such as dislocations and macrocracking, should be controlled during crystal growth to obtain high-quality bulk single crystals. Research activities related to thermal stress analysis during crystal growth, the cracking of single crystals induced by thermal stress, and dislocation density estimation during crystal growth are reviewed in this chapter. The effect of growth direction on the quality of single crystals is clarified based on three-dimensional thermal stress analysis of crystal anisotropy. The stress component governing the cracking induced by thermal stress and its critical values are obtained from the thermal stress analysis of experimental data on crystal cracking induced by thermal stress. The Haasen–Alexander–Sumino model, a dislocation kinetics model in which creep strain rate is related to the dislocation density as well as stress components, is applied to the quantitative estimation of dislocation density in semiconductor single crystals.
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