Abstract
Melt flow control using magnetic fields is one of the key issues in the optimization of growth processes for semiconductor bulk single crystals. This chapter reviews the present understanding of the influence of different types of magnetic fields on the melt convection and consequently on the crystal quality through heat and mass transfer. Besides the classic steady magnetic fields (e.g., vertical, transverse, cusp-shaped), new trends in the use of nonsteady magnetic fields (e.g., traveling, rotating, alternating) are presented. Although the results of several crystal growth experiments have already revealed the efficiency of using magnetic fields, numerical simulations and model experiments show the potential of new types of magnetic field configurations to improve crystal quality and reduce costs. Particular emphasis is given to bulk growth methods, such as Czochralski, Bridgman, vertical gradient freeze, and floating zone, for the growth of semiconductor materials such as silicon, gallium arsenide, germanium, and indium phosphide.
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