25 to 40 Gb/s Si ICs in selective epitaxial bipolar technology

Abstract

High-speed digital ICs as decision circuits, time-division multiplexers (MUX), demultiplexers (DEMUX), and frequency dividers are key components for multigigabit-per-second optical-fiber links. While advanced silicon bipolar technology meets the demands for all electronic components of 10-Gb/s direct detection transmission links now in development, there is a question whether the situation will change at transmission rates of 20 Gb/s. The authors try to answer this question by presenting the above key components with record operating speeds. A silicon bipolar technology with selective epitaxial growth (SEG) of the active base and collector regions is used for circuit fabrication. A static 16:1 low-power frequency divider demonstrates the low-power capability of the SEG technology. All measured data rates and frequencies are significantly higher than reported values for silicon ICs and, with one exception, even for III-V ICs. The 40 Gb/s measured with the DEMUX is the highest data rate achieved with an IC in any technology. >