Abstract
The flickering of low‐temperature polycrystalline silicon and metal‐oxide (LTPO) active‐matrix organic light‐emitting diode (AMOLED) display under low‐refresh‐rate driving condition can be detected even though there is no critical leakage current path from the storage capacitor. The flickering is mainly due to the brightness increase during data holding period. The effective channel length of driving thin‐film transistor (DTFT) would be reduced by electron trapping into the gate insulator of DTFT which operates under saturation mode. This study presents not only the physical model of electron trapping but also a novel driving method to release the trapped electrons. The experimental results show that that the brightness variation can be reduced from 3.7 % to 1.4 % at the 63rd gray level by the novel driving method.
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