Abstract
AbstractWe developed In‐Plane‐Switching (IPS) mode structure with vertically aligned common electrodes for amorphous silicon (a‐Si) thin film transistor liquid crystal display (TFT‐LCD). We could improve an aperture ratio of the panel with this new structure by the elimination of storage area and compact design. The new vertical structure showed stabilized voltage ripple, DC charge and flicker variation by RC delay reduction and direct voltage driving from every driver IC. The panel was fabricated with the conventional a‐Si TFT process. We focused on making a new structure to get better quality of image compared to previous IPS mode TFT‐LCD.
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