2/3-D process and device simulation. An effective tool for better understanding of internal behavior of semiconductor structures

Abstract

2/3-D numerical process and device simulation is presented as an extremely useful tool for the analysis and characterization of fabrication processes and corresponding electro-thermal behavior of semiconductor structures and devices standing alone and/or coupled in integrated circuits. In the introductory part of this chapter, a brief description is given of the basic features, processes, and structures implemented in the numerical process and device simulation. Visualization of the internal properties (electrical, thermal, optical, magnetic, and mechanical) allows comprehensive analysis of the critical regions and weak points of the analyzed structures. The presented examples illustrate the potential, power and beauty of numerical simulation of processes and devices for the identification and analysis of the behavior of parasitic devices that exist as inevitable parts of active devices and which degrade the normal operation and reliability of integrated circuits. Commercially available TCAD process and device simulators with verified calibrated complex electro-physical models, advanced numerical solvers securing stable calculations, and user friendly interactive environment provide a unique insight into the internal operation of the analyzed structure. They can be efficiently used for comprehensive physical interpretation of experimentally obtained results and/or particularly for prediction of the properties and behavior of new semiconductor structures and devices as well as for further development and optimization of new technologies and fabrication steps. W. Grabinski, B. Nauwelaers and D. Schreurs (eds.), Transistor Level Modeling for Analog/RF IC Design, 1–27. c © 2006 Springer. Printed in the Netherlands.