Abstract
We demonstrated AlGaN multi-quantum well (MQW) deep-ultraviolet (UV) light-emitting diodes (LEDs) with wavelengths in the range of 227.5 to 273 nm fabricated on high-quality AlN buffers on sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). We realized crack-free, thick AlN buffers on sapphire with a low threading dislocation density (TDD) and an atomically flat surface by using the ammonia (NH3) pulse-flow multilayer (ML) growth technique. We obtained single-peaked operation of an AlGaN-MQW LED with a wavelength of 227.5 nm, which is the shortest wavelength of AlGaN-based LED on sapphire. The maximum output power and the external quantum efficiency (EQE) of the 261- and 227.5-nm LEDs were 1.65 mW and 0.23% in room-temperature (RT) continuous-wave (CW) operation, and 0.15 mW and 0.2% in RT pulsed operation, respectively. © 2010 Wiley Periodicals, Inc. Electron Comm Jpn, 93(3): 24–33, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecj.10197
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