Abstract
The authors demonstrated AlGaN multiquantum-well (MQW) deep-ultraviolet light-emitting diodes (LEDs) with wavelengths in the range of 231–261nm, fabricated on low threading dislocation density AlN buffers formed through an ammonia (NH3) pulse-flow multilayer growth technique. The authors obtained a single-peaked operation of the AlGaN-MQW LED with a wavelength of 231nm, which is the shortest wavelength of AlGaN-based LED on sapphire. The maximum output power and external quantum efficiency of the 261 and 231nm LEDs were 1.65mW and 0.23% under room-temperature (RT) continuous-wave (cw) operation, and approximately 5μW and 0.001% under RT pulsed operation, respectively.
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