22-GHz-Band Oscillator Using Integrated H-Shape Defected Ground Structure Resonator in 0.18- $\mu \text{m}$ CMOS Technology

Abstract

A novel 22-GHz-band oscillator using an integrated defected ground structure (DGS) resonator is presented for quasi-millimeter waveband applications. The DGS is etched on the first metal layer (M1) below a 50- $\Omega $ microstrip line on the top metal layer (M6) of 0.18- $\mu \text{m}$ one-poly six-metal (1P6M) complementary metal-oxide-semiconductor (CMOS) technology. The proposed oscillator is fabricated using 0.18- $\mu \text{m}$ CMOS technology, and the measured carrier frequency and phase noise are 22.88 GHz and −129.21 dBc/Hz (−108.05 dBc/Hz) at 10-MHz (1 MHz) offset frequency, respectively. The power dissipation is 6 mW that results in a figure of merit to be −188.8 dB. As the DGS resonator could be designed at any high frequency, it may give an alternative design approach of high performance voltage controlled oscillator and frequency synthesizers at K-band and beyond, thus alleviates the problem of self-resonance that a spiral inductor usually encounters at higher frequency.