Abstract
The effect of Cr or Cu buffer layers on open-circuit voltage of thin-film thermoelectric generator was investigated. Thermoelectric thin films of Bi_2Te_<2.7>Se_<0.3> (p-type) and Bi_<0.5>Sb_<1.5>Te_3 (n-type) were deposited onto SiO_2 glass substrate using the Cr or Cu buffer layers. The buffer layer enabled to prevent the thermoelectric thin films from removing onto the substrate during the thin-film patterning process. X-ray diffraction patterns of the thermoelectric thin films were not affected by the underlying Cr or Cu buffer layers with 1 nm thickness. The open-circuit voltage of the thin-film thermoelectric devices with 1 nm-Cr buffer layers were approximately 50 mV higher than that of the devices with 1 nm-Cu buffer layers. This value is consistent with the estimated one by taking the current flow into the buffer layers.
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