Abstract
Recent advances in high power millimeter wave (mmW) Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT) Power Amplifier (PA) technology combined with advances in high-frequency power combining have enabled the development of a 200–260GHz solid state power amplifier producing >700mW of output power. This paper outlines the development of a 50mW+ InP HBT PA Monolithic Millimeter wave Integrated Circuit (MMIC) and the technology associated with the subsequent power combining of 32 of these PA MMICs.
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