Abstract
A 0.85 µm wavelength monolithic integrated optoelectronic receiver consisting of a GaAs MSM photodiode and a multi-stage AlGaAs/GaAs HEMT amplifier has been fabricated. The transimpedance is 12.6 kΩ (into 50 Ω) and the sensitivity is better than –14.7 dBm (at 12.5 Gbit/s, BER = 10-9). The bandwidth of 13.0 GHz implies suitability for transmission rates up to 20 Gbit/s.
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