Abstract
Development of high‐performance p‐channel thin‐film transistors (TFTs) can be an essential building block for next‐generation display technologies which require a great power efficiency. While an n‐channel InGaZnO TFT has been practically demonstrated, the counterparts are still challenging because of their ionic bonding nature. Here we report high‐performance p‐channel hexagonal tellurium (Te) TFT which exhibits outstanding device performances with a field‐effect mobility of 21.2 cm2/Vs, a current modulation ratio of 2.3 × 105, a subthreshold swing of 0.2 V/dec, and a threshold voltage of ‐0.3 V. This study shows a strong potential of p‐channel Te TFT for next‐generation display applications.
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