Abstract

Waveguide integrated 2/spl times/2 InGaAsP laser amplifier gate switch arrays were fabricated using MOVPE and RIE. For the first time, RIE was applied as an etching process for the butt-coupling of the amplifier and the waveguide. A very low fibre-to-fibre loss of 1.2 dB was obtained, and the on/off extinction ratio exceeded 42 dB.

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Topics from this Paper

  • InGaAsP
  • Waveguide
  • Amplifier
  • Laser Amplifier
  • Etching
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Electronics Letters