Waveguide integrated 2/spl times/2 InGaAsP laser amplifier gate switch arrays were fabricated using MOVPE and RIE. For the first time, RIE was applied as an etching process for the butt-coupling of the amplifier and the waveguide. A very low fibre-to-fibre loss of 1.2 dB was obtained, and the on/off extinction ratio exceeded 42 dB.
InGaAsP Waveguide Amplifier Laser Amplifier Etching Extinction Laser Loss Ratio Applied
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Climate change Research Articles published between Nov 21, 2022 to Nov 27, 2022
Nov 28, 2022
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No potential conflict of interest was reported by the authors. The conception and design of the study, acquisition of data, analysis and interpretatio...Read More
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