Abstract
Multiple quantum-well (MQW) lasers with metastable InGaAsSb quantum wells and AlGaAsSb barriers and claddings were grown on n +− GaSb(100) substrates by molecular beam epitaxy. The lasers exhibited a lasing wavelength of 2.78 μm and pulsed operation up to 60°C. Pulsed threshold current of 1.1 A, corresponding to a current density of 9.5 kA/cm 2, and maximum output power of 30 mW have been achieved at 15°C for broad-area lasers. The characteristic temperature was 58 K over the temperature range of 0 to 40°C. This is the longest emission wavelength reported for quantum-well lasers operating at room temperature.
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