Abstract
The current status of GaInAsSb/AlGaAsSb and InAsSb/InAlAsSb strained quantum-well (QW) lasers grown by molecular beam epitaxy is described. At ∼2 μm, GaInAsSb/AlGaAsSb lasers grown on GaSb have room-temperature pulsed threshold current density of 143 A/cm2, cw power of 1.3 W, and a maximum cw operating temperature of 130 °C. Similar lasers emitting at ∼2.7 μm have operated pulsed up to 60 °C and cw up to −39 °C. At ∼3.5 μm, InAsSb/InAlAsSb QW lasers grown on InAs have exhibited cw power of 215 mW/facet at 80 K, with pulsed operation up to 225 K and cw up to 175 K. Grown on GaSb, the InAsSb/InAlAsSb QW lasers emitting at ∼3.9 μm have maximum pulsed and cw operating temperatures of 165 and 128 K, respectively. The performance at longer wavelengths is limited by Auger recombination.
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