2~5 μm中红外波段GaSb半导体材料研究进展

Abstract

III-V族半导体材料因其光电子应用中的优势而备受关注。这些材料中，GaSb和GaSb相关半导体材料因具有高的载流子迁移率和较窄的禁带宽度而被认为是中红外波段光电子半导体器件的首选材料。然而，半导体光电子器件的性能强烈依赖于材料的结构和光学性质，所以GaSb材料的研究工作重点是如何提高晶体质量，精确调整合金组分，提高发光性能等。本文对2~5 μm GaSb和GaSb相关半导体材料的外延生长和材料性质的研究进展做出了简要的概述，主要讨论了GaSb材料、GaSb合金薄膜材料以及GaSb基量子阱材料的外延生长过程及材料性质，以期获得GaSb基半导体材料外延生长的最优条件。 III-V group semiconductors have received a great deal of attention because of their potential ad-vantages for use in optoelectronic and electronic applications. Among these materials, with characteristics that include high carrier mobility and a narrow band gap, gallium antimonide (GaSb) and GaSb-related semiconductors have been recognized as most suitable candidates for high-per- formance optoelectronics in the mid-infrared range. The performance of semiconductor devices, however, strongly dependent on the structure and optical properties of materials, so the GaSb materials research focus is to improve the quality of crystal, adjust the alloy composition, improve the luminous performance, etc. In this paper, the progress of epitaxial growth and material properties of 2 - 5 μm GaSb and GaSb-related semiconductor materials are briefly reviewed. The epitaxial growth processes and material properties of GaSb, GaSb related alloy materials and GaSb- based quantum well materials are discussed in order to obtain the optimal conditions for epitaxial growth of GaSb-based semiconductor materials.