Abstract
Groups III–V semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications. Gallium antimonide (GaSb) and GaSb-related semiconductors, which exhibit high carrier mobility and a narrow band gap (0.725 eV at 300 K), have been recognized as suitable candidates for high-performance optoelectronics in the mid-infrared range. However, the performances of the resulting devices are strongly dependent on the structural and emission properties of the materials. Enhancement of the crystal quality, adjustment of the alloy components, and improvement of the emission properties have therefore become the focus of research efforts toward GaSb semiconductors. Molecular beam epitaxy (MBE) is suitable for the large-scale production of GaSb, especially for high crystal quality and beneficial optical properties. We review the recent progress in the epitaxy of GaSb materials, including films and nanostructures composed of GaSb-related alloys and compounds. The emission properties of these materials and their relationships to the alloy components and material structures are also discussed. Specific examples are included to provide insight on the common general physical and optical properties and parameters involved in the synergistic epitaxy processes. In addition, the further directions for the epitaxy of GaSb materials are forecasted.
Highlights
The mid-infrared (MIR) spectral region is of great research interest because the practical realization of optoelectronic devices that operate in the 2–5 μm wavelength region would bring potential applications in a wide range of areas, including optical gas sensing, environmental monitoring, free-space optical communications, infrared countermeasures, and thermal imaging [1,2,3]
Gallium antimonide (GaSb)-based alloys and compounds offer a wide range of electronic band gaps, band gap offsets and electronic barriers along with extremely high electron mobility; these materials would enable a variety of devices that are much faster than the equivalent InP- and GaAs-based devices and infrared light sources, and would
GaSb and related semiconductors refers to the groups III–V semiconductors that contain the Sb element, including GaAsSb, InAsSb, InGaAsSb and AlGaAsSb
Summary
The mid-infrared (MIR) spectral region is of great research interest because the practical realization of optoelectronic devices that operate in the 2–5 μm wavelength region would bring potential applications in a wide range of areas, including optical gas sensing, environmental monitoring, free-space optical communications, infrared countermeasures, and thermal imaging [1,2,3]. Based on the GaSb materials described above, a variety of advanced optoelectronic devices, including laser diodes, detectors, and transistors, have been realized [1,2,3,4]. As the research into optoelectronic devices has advanced, spectroscopic techniques have become increasingly important because they are highly efficient and rapid modern analysis methods These techniques can effectively determine the photophysical properties of the materials and reveal their excited-state processes to determine their potential use in optoelectronic devices. Two-dimensional (2D) materials offer further promise for the development of a new range of fundamental optoelectronic materials owing to their high crystal quality features and rich photophysical properties that will provide new material options for generation optoelectronic devices [2,8,9,10]. We discuss GaSb materials fabricated by the MBE method that exhibit unusual optical properties and provide a foundation for the application of these materials in optoelectronic devices
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
