Abstract
GaSb lattice-matched Ga1−xInxAsySb1−y has been grown by liquid phase epitaxy on (100) and (111)B oriented substrates using initial melt supersaturation ΔT varying from 10 to 30 °C, at growth temperatures >600 °C. It is shown that the band-gap cutoff wavelength, measured at room temperature by the electroreflectance method, is ∼2.38 μm for (100) layers whatever ΔT, and increases from 2.38 μm up to 2.51 μm for (111)B oriented layers when ΔT is increased from 15 to 25 °C. Photoluminescence experiments at 2 K confirm the band-gap reduction occurring at high ΔT with the (111)B orientation.
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