Year-end Sale % OFF 
Abstract
A novel ultra-high-speed optical gate monolithically integrating a uni-travelling-carrier photodiode and a travelling-wave electroabsorption modulator (TW-EAM) is presented. By using the nonlinear extinction characteristics of the EAM, the minimum gate opening time of 2.3 picoseconds with an extinction ratio of 14 dB is achieved.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
