Abstract
The top‐gate self‐aligned structure and back channel etched (BCE) structure have been conducted employing InGaSnO (IGTO) as an active layer in this study. The mobility of IGTO TFT is around 35 cm2/Vs for both TFT structures by optimizing the fabrication process. The 7.1 inch 270 x 320 (x RGB) micro‐LED display driven by top‐gate self‐aligned IGTO TFTs and 35 inch pitch 1.6mm mini‐LED display tiled by 4(L)*2(W) sheets of 10.7 inch 120 x 120 (x RGB) panel driven by BCE IGTO TFTs are demonstrated. The power consumption of panel driven by IGTO TFTs is the 43% of IGZO, resulting in the outstanding merits of high mobilitydevices.
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