2.27 1/f noise voltage in a thin film structure

Abstract

1/f noise in current carrying thin film devices is caused by fluctuation of the electrical conductivity of the film material. Describing its effect on the voltage distribution in a device requires a two-dimensional analysis. This may be done by means of a theory, presented in this article, where the fluctuation is treated as current dipoles. The geometrical dependence of the noise intensity across electrodes on Hall generator structures, made from InSb thin films, is measured. This is in fair agreement with predictions based on the theory.