Abstract

Waveguide integrated 2×2 InGaAsP laser amplifier gate switch arrays were fabricated using MOVPE and RIE. For the first time, RIE was applied as an etching process for the butt-coupling of the amplifier and the waveguide. A very low fibre-to-fibre loss of 1.2 dB was obtained, and the on/off extinction ratio exceeded 42 dB.

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Topics from this Paper

  • Laser Amplifier Gate Switch
  • Gate Switch Arrays
  • Laser Amplifier Gate
  • Amplifier Gate
  • InGaAsP Laser
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