Electronics Letters | VOL. 32
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2×2 InGaAsP/InP laser amplifier gate switch arrays using reactive ion etching

Publication Date Jan 1, 1996

Abstract

Waveguide integrated 2×2 InGaAsP laser amplifier gate switch arrays were fabricated using MOVPE and RIE. For the first time, RIE was applied as an etching process for the butt-coupling of the amplifier and the waveguide. A very low fibre-to-fibre loss of 1.2 dB was obtained, and the on/off extinction ratio exceeded 42 dB.

Concepts

Laser Amplifier Gate Switch Gate Switch Arrays Laser Amplifier Gate Amplifier Gate InGaAsP Laser Gate Switch Switch Arrays Laser Amplifier Extinction Ratio Etching Process

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