Electronics Letters | VOL. 32
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2×2 InGaAsP/InP laser amplifier gate switch arrays using reactive ion etching

Publication Date Jan 1, 1996

Abstract

Waveguide integrated 2×2 InGaAsP laser amplifier gate switch arrays were fabricated using MOVPE and RIE. For the first time, RIE was applied as an etching process for the butt-coupling of the amplifier and the waveguide. A very low fibre-to-fibre loss of 1.2 dB was obtained, and the on/off extinction ratio exceeded 42 dB.

Concepts
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Laser Amplifier Gate Switch
Gate Switch Arrays
Laser Amplifier Gate
Amplifier Gate
InGaAsP Laser
Gate Switch
Switch Arrays
Laser Amplifier
Extinction Ratio
Etching Process

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