1/f noise measurements on indium antimonide metal–oxide–semiconductor field-effect transistors

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We performed the 1/f noise measurements on n-channel indium antimonide (InSb) metal–oxide–semiconductor field-effect transistors (MOSFETs) biased in linear and saturation regions operated at 77 K. Through the investigation of the dependence of drain voltage noise power spectral density on gate and drain bias, we have estimated the oxide–semiconductor interface trap density as a function of energy. In this analysis, both the noise magnitude and the spectral shape were studied. In this study, the frequency span was performed from 150 Hz to 5 kHz. The noise behavior of the device was modeled using the modified McWhorter Model, originally developed for silicon FETs. The interface trap concentration values computed from the low-frequency noise measurements using the previous model were found to agree closely with InSb/SiO2 interface properties measured by capacitance and conductance methods.