Abstract
The results of experimental research aimed at determining the role of mobile and steady defects of the lattice in 1/f noise generation in thin metal films are presented. There were studied technological factors and external effects (thermal and current annealing, natural aging, and γ irradiation) which influence concentration of microdefects and the noise. Both equilibrium and nonlinear resistance fluctuations at high current density were investigated. The obtained results demonstrate that 1/f noise in metal films is caused by mobile defects.
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