Abstract
We perform gate- and temperature-dependent low-frequency noise measurements on epitaxial graphene nanoribbons (epiGNRs) grown on the sidewalls of trenches etched in SiC substrates. We find that the measured noise spectra are dominated by 1/f noise, and the main source of the noise at high carrier densities is the long-range scatters (charge traps) at the epiGNR/gate-dielectric interface. Interestingly, our findings differentiate sidewall epiGNRs from previously studied lithographically patterned GNRs while exhibiting competitive noise characteristics similar to those in high-quality suspended graphene or graphene on hexagonal boron nitride substrates. These results provide confidence in potential epiGNR-based device applications in low-noise nanoelectronics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
