Abstract
An approach to the problem of 1/f voltage noise in conductors is developed based on an uncertainty relation for the Fourier-transformed signal. It is shown that a lower bound on the power spectrum of voltage fluctuations exists. This bound is calculated explicitly in the case of unpolarized charge carriers with a parabolic dispersion, and is found to have a 1/f low-frequency asymptotic. A comparison with the 1/f-noise measurements in InGaAs quantum wells is made which shows that the observed noise levels are only a few times higher than the bound established.
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