Abstract
AbstractTime‐ and spatially resolved luminescence of GaAs/AlGaAs quantum wires (QWRs) grown by organometallic chemical vapor deposition on nonplanar substrates is reported. The effective width of these nanoscopic wires is as small as 9.5 nm, giving rise to a separation of 45 meV for the quasi‐one‐dimensional conduction subbands. The QWRs exhibit high luminescence efficiency and the radiative recombination lifetime of the quantum confined carriers is found to be larger than 310 ps. Combined spectral‐time‐resolved experiments directly visualize the carrier capture process and the thermalization of the 1D carriers in the QWR structures.
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