Abstract
193nm Excimer laser assisted growth and crystallization of amorphous Si/Ge bilayer patterns with circular structures of 3μm diameter and around 25nm total thickness, is presented. Amorphous patterns were grown by Laser induced Chemical Vapor Deposition, using nanostencils as shadow masks and then irradiated with the same laser to induce structural and compositional modifications for producing crystalline SiGe alloys through fast melting/solidification cycles. Compositional and structural analyses demonstrated that pulses of 240mJ/cm2 lead to graded SiGe alloys with Si rich discs of 2μm diameter on top, a buried Ge layer, and Ge rich SiGe rings surrounding each feature, as predicted by previous numerical simulation.
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