Abstract
AbstractWe report nanometer-sized silicon germanium (SiGe) alloy crystallites prepared by excimer laser ablation in constant-pressure inert gas. Size distribution of the SixGelxultrafine particles decreases with decreasing x under fixed conditions of deposition such as ambient gas pressure. Raman scattering spectra of the deposited SiGe ultrafine particles show three peaks intrinsic to crystalline SiGe alloys, and the linewidths of these peaks broaden due to the reduced size of the crystallites. Furthermore, a visible photoluminescence (PL) band with a peak at around 2.2 eV is obtained at room temperature after an annealing process.
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