Abstract
The ultrafast laser inscription technique has been used to fabricate channel waveguides in Tm3+-doped Lu2O3 ceramic gain medium for the first time to our knowledge. Laser operation has been demonstrated using a monolithic microchip cavity with a continuous-wave Ti:sapphire pump source at 796 nm. The maximum output power achieved from the Tm:Lu2O3 waveguide laser was 81 mW at 1942 nm. A maximum slope efficiency of 9.5% was measured with the laser thresholds observed to be in the range of 50-200 mW of absorbed pump power. Propagation losses for this waveguide structure are calculated to be 0.7 dB⋅cm-1 ± 0.3 dB⋅cm-1 at the lasing wavelength.
Highlights
Ultrafast laser inscription (ULI) is widely used for the fabrication of three dimensional photonic structures across a broad range of transparent dielectrics [1]
In ULI, when ultrashort laser pulses are tightly focused beneath the surface of a transparent dielectric material, nonlinear processes such as multi-photon absorption and/or tunneling ionization take place inducing avalanche ionization within the small focal volume of micron dimensions which leads to high temperatures and pressures through an induced micro-plasma
We have demonstrated the first waveguides in Tm3+-doped Lu2O3 ceramics fabricated via ULI
Summary
Ultrafast laser inscription (ULI) is widely used for the fabrication of three dimensional photonic structures across a broad range of transparent dielectrics [1]. T. Brown, "Lasing action at around 1.9 μm from an ultrafast laser inscribed Tm-doped glass waveguide," Opt. Lett. J. Withford, "Fifty percent internal slope efficiency femtosecond direct-written Tm3+:ZBLAN waveguide laser," Opt. Lett.
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